本書從介紹器件、強關聯電子系統、多層納米結構入手，討論了在多層納米結構中的輸運現象，而其貫穿始終的方法是動力學平均場論。具體內容包括利用動力學平均場論來計算電子格林函數、線性響應輸運，約瑟夫森結、熱電器件等中的輸運現象等，還討論了非平衡和非線性響應。本書可以作為相關領域研究生的教材，也可作為科研工作者的參考書。
本書是影印英文版物理學專著，原書由世界科技出版社于2006年出版。多層納米結構中的輸運將會是未來極為重要的納米技術應用，而動力學平均場論正是研究這一過程的手段。本書作者正是這一領域的主要研究者之一，又有豐富的授課經驗。因而本書對這一課題作了深入探討，同時講解清晰、易于理解。還有，本書為彩色印刷，印制精美，是外觀與內容并重的佳作。
Preface
Acknowledgments
1.Introduction to Multilayered Nanostructures
1.1 Thin Film Growth and Multilayered Nanostructures
1.2 Strongly Correlated Materials
1.3 The Proximity Effect
1.4 Electronic Charge Reconstruction at an Interface
1.5 Roadmap to Real-Materials Calculations
2.Dynamical Mean-Field Theory in the Bulk
2.1 Models of Strongly Correlated Electrons
2.2 Second Quantization
2.3 Imaginary Time Green's Functions
2.4 Real Time Green's Functions
2.5 The Limit d oo and the Mapping onto a Time-Dependent Impurity Problem
2.6 Impurity Problem Solvers
2.7 Computational Algorithms
2.8 Linear-Response dc-Transport in the Bulk
2.9 Metal-Insulator Transitions within DMFT
2.10 Bulk Charge and Thermal Transport
3.Dynamical Mean-Field Theory of a Multilayered Nanostructure
3.1 Potthoff-Nolting Approach to Multilayered Nanostructures
3.2 Quantum Zipper Algorithm (Renormalized Perturbation Expansion)
3.3 ComputationalMethods .
3.4 Density of States for a Nanostructure
3.5 Longitudinal Charge Transport Through a Nanostructure
3.6 Charge Reconstruction (Schottky Barriers)
3.7 Longitudinal Heat Transport Through a Nanostructure
3.8 Superconducting Leads and Josephson Junctions
3.9 Finite Dimensions and Vertex Corrections
4.Thouless Energy and Normal-State Transport
4.1 Heuristic Derivation of the Generalized Thouless Energy
4.2 Thouless Energy in Metals
4.3 Thouless Energy in Insulators
4.4 Crossover from Tunneling to Incoherent Transport in Devices
5.Josephson Junctions and Superconducting Transport
5.1 Introduction to Superconducting Electrorucs Devices
5.2 Superconducting Proximity Effect
5.3 Josephson Current
5.4 Figure-of-Merit for a Josephson Junction
5.5 Effects of Temperature
5.6 Density of States and Andreev Bound States
6.Thermal Transport
6.1 Electronic Charge Reconstruction Near a Metal-Insulator Transition
6.2 Thermal Transport Through a Barrier Near the Metal-Insulator Transition
7.Future Directions
7.1 Spintronics Devices
7.2 Multiband Models for Real Materials
7.3 Nonequilibrium Properties
7.4 Summary
Appendix A Problems
Bibliography
Index
